EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE FILMS ON SI SUBSTRATES

Authors
YAEGASHI S KURIHARA T SATO K SEGAWA H
Citation
S. Yaegashi et al., EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE FILMS ON SI SUBSTRATES, IEEE transactions on magnetics, 30(6), 1994, pp. 4836-4838
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
30
Issue
6
Year of publication
1994
Part
1
Pages
4836 - 4838
Database
ISI
SICI code
0018-9464(1994)30:6<4836:EAMOFF>2.0.ZU;2-C
Abstract
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrat es was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epita xial films were-not obtained without ade substrate bias except those o n Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energ y should beconsidered with magnetocrystalline anisotropy.