HIGH-SPEED, LOW-THRESHOLD INGAASP SEMIINSULATING BURIED CRESCENT LASERS WITH 22 GHZ BANDWIDTH

We have fabricated high-speed, low-threshold 1.3-mu-m InGaAsP semi-ins ulating buried crescent lasers with a CW 3-dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. T his is the highest 3-dB modulation bandwidth ever reported for the pla nar-type semi-conductor lasers. These results were achieved by impleme nting a submicron photolithographic process in the channel etching to reduce the cavity width and a polyimide dielectric layer under the bon ding pad area to minimize the electrical parasitics.