LATERAL GA0.47IN0.53AS AND GAAS P-I-N PHOTODETECTORS BY SELF-ALIGNED DIFFUSION

Contact-self-aligned diffusion and compositional mixing has been utili zed in the fabrication of lateral p-i-n photodetectors in Ga0.47In0.53 As and GaAs for 1.3 and 0.85-mu-m wavelength operation. The p-type con tact and diffusion utilizes W(Zn) metallurgy and the n-type contact an d diffusion utilizes MoGe2 metallurgy. Bandwidths exceeding 7.5 and 18 .0 GHz, respectively, have been obtained using these structures with b ias voltages of congruent-to 5 V. The performance, ease of fabrication , and process compatibility make these devices suitable for integratio n in digital circuits employing field-effect transistors.