HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON

Authors
PARISINI A NOBILI D ARMIGLIATO A DERDOUR M MORO L SOLMI S
Citation
A. Parisini et al., HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON, Applied physics. A, Solids and surfaces, 54(3), 1992, pp. 221-224
Citations number
16
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
54
Issue
3
Year of publication
1992
Pages
221 - 224
Database
ISI
SICI code
0721-7250(1992)54:3<221:HTEOSP>2.0.ZU;2-4
Abstract
The thermal evolution of monoclinic SiAs precipitates at 1050-degrees- C in silicon samples implanted with 1 and 1.5 x 10(17) As/cm2 was foll owed by transmission electron microscopy (TEM) and secondary neutral m ass spectrometry (SNMS). These experiments show, for the first time, t he coexistence of two different states of As in silicon, i.e., the ele ctrically active and the inactive mobile dopant, in equilibrium with m onoclinic SiAs precipitates. Moreover, they provide, for the saturatio n concentration of As in silicon, which includes both these states, a value of 3 x 10(21) cm-3 at 1050-degrees-C.