EPITAXIAL-GROWTH OF LATTICE MISMATCHED SRF2 FILMS ON (100) GAAS

For the first time insulating epitaxial SrF2 films on (100) GaAs subst rates have been grown by thermal deposition followed by in situ anneal ing process. Structural properties of SrF2 films examined by X-ray dif fraction, scanning electron microscopy and transmission electron micro scopy indicate a very good crystalline quality. It is observed from th e X-ray analysis that SrF2 layers thinner than 100 nm suffer two dimen sional compressive stress due to the lattice misfit while those thicke r than 100 nm suffer two dimensional tensile stress due to the differe nce in the thermal expansion coefficients.