Films of the composition Ge40S60 have been studied in the temperature
range of 313-423 K for electrical conductivity, and 293-373 K for ther
mal conductivity. The dc conductivity results indicate a single value
activation energy of 0.863 eV for the conductivity in the applied temp
erature range. The thermal conductivity coefficient increases linearly
with temperature at a thickness of d = 0.311 cm. It was found that th
e investigated samples show a memory effect. The threshold switching v
oltage was found to increase linearly with film thickness. Moreover, t
he threshold voltage decreases exponentially with temperature. The dat
a are analysed using a thermal model for the switching process.