PHOTOELECTROCHEMICAL IMAGING OF SUBMONOLAYER LEAD DEPOSITS ON N-GAAS

Authors
PEAT R KUCERNAK AR WILLIAMS DE
Citation
R. Peat et al., PHOTOELECTROCHEMICAL IMAGING OF SUBMONOLAYER LEAD DEPOSITS ON N-GAAS, Electrochimica acta, 37(5), 1992, pp. 933-942
Citations number
15
Journal title
Electrochimica acta → ACNP
ISSN journal
00134686
Volume
37
Issue
5
Year of publication
1992
Pages
933 - 942
Database
ISI
SICI code
0013-4686(1992)37:5<933:PIOSLD>2.0.ZU;2-8
Abstract
A scanning laser microscope has been used to obtain a spatially resolv ed map of the photocurrent distribution around metal particles at the n-GaAs/electrolyte interface. A minority carrier capture zone that is potential dependent is observed around the metal particles. Mechanisms of image contrast are discussed in terms of particle size, scattering phenomena, screening effects and carrier recombination effects.