RECENT ADVANCES IN HIGH QUANTUM YIELD DYE SENSITIZATION OF SEMICONDUCTOR ELECTRODES

Citation
Ba. Parkinson et Mt. Spitler, RECENT ADVANCES IN HIGH QUANTUM YIELD DYE SENSITIZATION OF SEMICONDUCTOR ELECTRODES, Electrochimica acta, 37(5), 1992, pp. 943-948
Citations number
36
Journal title
ISSN journal
00134686
Volume
37
Issue
5
Year of publication
1992
Pages
943 - 948
Database
ISI
SICI code
0013-4686(1992)37:5<943:RAIHQY>2.0.ZU;2-Z
Abstract
Recent advances in the study of the dye sensitization of semiconductor electrodes are reviewed highlighting the characteristics of dye/semic onductor pairs with a high quantum yield, PHI, for electrons collected as current per photon absorbed by the dye. Photoelectrochemical data, picosecond fluorescence measurements, and flash photolysis results on high-PHI systems are discussed in relation to kinetic models of the i njection process in order to provide an overall evaluation of the curr ent state of the understanding of the events following excitation of a n excited dye adsorbed on a semiconductor surface.