CHARACTERIZATION OF A SUPERLATTICE WITH AN ENLARGED WELL BY SYNCHROTRON RADIATION AND PHOTOLUMINESCENCE

We have studied a binary (AlAs/GaAs) multilayer structure and a short- period ternary (AlGaAs/GaAs) superlattice with a central enlarged GaAs single quantum well grown by molecular beam epitaxy (MBE) and by mean s of x-ray diffraction (XRD) (involving synchrotron radiation) and pho toluminescence (PL). Using careful simulations of the x-ray diffractio n pattern, we have evaluated the width of the enlarged quantum well fr om the thickness oscillation features near the satellites. The well th icknesses obtained by XRD and PL are correlated and show agreement of the values concluded from these independent experimental methods. Base d on numerical simulations, the features of the thickness oscillations are discussed in more detail with the intention of presenting possibi lities appropriate for the analysis of artificially layered structures by means of XRD.