Gt. Baumbach et al., CHARACTERIZATION OF A SUPERLATTICE WITH AN ENLARGED WELL BY SYNCHROTRON RADIATION AND PHOTOLUMINESCENCE, Semiconductor science and technology, 7(3), 1992, pp. 304-310
We have studied a binary (AlAs/GaAs) multilayer structure and a short-
period ternary (AlGaAs/GaAs) superlattice with a central enlarged GaAs
single quantum well grown by molecular beam epitaxy (MBE) and by mean
s of x-ray diffraction (XRD) (involving synchrotron radiation) and pho
toluminescence (PL). Using careful simulations of the x-ray diffractio
n pattern, we have evaluated the width of the enlarged quantum well fr
om the thickness oscillation features near the satellites. The well th
icknesses obtained by XRD and PL are correlated and show agreement of
the values concluded from these independent experimental methods. Base
d on numerical simulations, the features of the thickness oscillations
are discussed in more detail with the intention of presenting possibi
lities appropriate for the analysis of artificially layered structures
by means of XRD.