SMALL-SIGNAL AC RESPONSE OF HOT-ELECTRONS IN NARROW-GAP SEMICONDUCTORS IN THE EXTREME QUANTUM LIMIT AT LOW-TEMPERATURES

The small-signal mobility of hot electrons in narrow-bandgap semicondu ctors in the presence of a quantizing magnetic field at low temperatur es has been investigated. The model includes the band non-parabolicity , non-equipartition of phonons and Landau level broadening due to elec tron impurity interactions. The carrier distribution function is consi dered to be drifted Maxwellian and the electrons are assumed to occupy the lowest Landau subband. Numerical results are obtained for n-Hg0.8 Cd0.2Te at low temperatures. The AC mobility is found to remain consta nt up to a certain frequency and then to decrease at higher frequencie s. The phase lag between the drift velocity and the electric field inc reases with frequency.