FIELD-ASSISTED RECOMBINATION IN SILICON SOLAR-CELLS WITH HEAVILY DOPED BASE - A LOSS MECHANISM FOR THE OPEN-CIRCUIT VOLTAGE

Authors
DHARIWAL SR SHARMA RC
Citation
Sr. Dhariwal et Rc. Sharma, FIELD-ASSISTED RECOMBINATION IN SILICON SOLAR-CELLS WITH HEAVILY DOPED BASE - A LOSS MECHANISM FOR THE OPEN-CIRCUIT VOLTAGE, Semiconductor science and technology, 7(3), 1992, pp. 315-319
Citations number
18
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3
Year of publication
1992
Pages
315 - 319
Database
ISI
SICI code
0268-1242(1992)7:3<315:FRISSW>2.0.ZU;2-8
Abstract
An explanation for much lower open-circuit voltages of silicon pn junc tion solar cells with heavily doped base layers has been obtained. Eff ects due to bandgap narrowing, lifetime and minority carrier mobility variations do not fully explain such a reduction. Field-assisted recom bination is identified as an important mechanisms for the loss of open -circuit voltages in these solar cells.