RESONANT HOLE TUNNELING THROUGH A SINGLE HETEROBARRIER IN SEMICONDUCTOR HETEROSTRUCTURES

Authors
SURIS RA ZEGRYA GG
Citation
Ra. Suris et Gg. Zegrya, RESONANT HOLE TUNNELING THROUGH A SINGLE HETEROBARRIER IN SEMICONDUCTOR HETEROSTRUCTURES, Semiconductor science and technology, 7(3), 1992, pp. 347-351
Citations number
4
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3
Year of publication
1992
Pages
347 - 351
Database
ISI
SICI code
0268-1242(1992)7:3<347:RHTTAS>2.0.ZU;2-V
Abstract
This paper considers how the transformation of heavy holes into bounda ry states and then into light holes influences the tunnel transparency of a single barrier in a semiconductor heterostructure. The tunnel tr ansparency is shown to be of a resonant nature, the barrier becoming a bsolutely transparent at definite angles of incidence of the heavy hol e onto the heteroboundary.