Free-carrier absorption is theoretically studied for semiconductor las
ers where the photon energy is as large as the energy gap. A quantum-m
echanical investigation shows that intraband absorption is very weak a
nd interband absorption totally negligible, in contrast to the usual c
lassical estimations. Therefore free-carrier absorption in semiconduct
or lasers is insignificant. It follows that free-carrier absorption is
not the reason for the impossibility of laser action in indirect-band
gap semiconductors. Obviously the scattering and mirror losses are res
ponsible for this effect.