COMPLEMENTARY ALGAAS GAAS HBT I-2-L (CHI2L) TECHNOLOGY/

The monolithic integration of non-self-aligned AlGaAs/GaAs N-p-n and P -n-p HBT's with selective OMVPE has been utilized to demonstrate a low -power high-speed integrated injection logic (I2L) technology. Sevente en-stage ring oscillators with a logic swing of 0.7 V exhibited a reco rd delay of 65 ps per gate with power dissipation of 13 mW per gate fo r a speed-power product of 850 fJ. This value was in excellent agreeme nt with SPICE simulations based on extracted device parameters which p redicted a speed-power product of 840 fJ. Additional simulations predi cated 28-fJ speed-power product and more than a factor of 2 reduction in gate delay with improved epitaxial design and use of submicrometer emitters and self-aligned processing.