DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON

Authors
LO GQ KWONG DL MATHEWS VK FAZAN PC DITALI A
Citation
Gq. Lo et al., DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON, IEEE electron device letters, 13(4), 1992, pp. 183-185
Citations number
16
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
13
Issue
4
Year of publication
1992
Pages
183 - 185
Database
ISI
SICI code
0741-3106(1992)13:4<183:DDIUNO>2.0.ZU;2-I
Abstract
The dielectric breakdown characteristics of thin reoxidized Si3N4 film s on both smooth and rugged poly-Si have been studied under dynamic st ressing (unipolar and bipolar) with frequency up to 500 kHz. For capac itors with smooth poly-Si, the time to breakdown (t(BD)) increases wit h frequency under unipolar stressing with positive gate bias, whereas it slightly decreases with frequency under unipolar and bipolar stress ings with negative gate bias. For capacitors with rugged poly-Si, t(BD ) increases with frequency in all cases.