HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING

Authors
CHEN WL BALASINSKI A ZHANG BL MA TP
Citation
Wl. Chen et al., HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING, IEEE electron device letters, 13(4), 1992, pp. 201-202
Citations number
6
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
13
Issue
4
Year of publication
1992
Pages
201 - 202
Database
ISI
SICI code
0741-3106(1992)13:4<201:HEOICC>2.0.ZU;2-2
Abstract
A rapid charge-pumping method was used to measure the interface-trap p arameters in MOSFET's. The geometric mean of the electron and hole int erface-trap capture cross sections decreases significantly (as much as two orders of magnitude) after Fowler-Nordheim (F-N) injection, and g radually recovers toward its original value. This effect is consistent with the interface-trap transformation process observed in MOS capaci tors.