THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P-NJUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE()

Silicided shallow p+-n junctions, formed by BF2+ implantation into thi n Co films on Si substrates and subsequently annealed, show a reverse anneal of junction characteristics in the temperature range between 55 0 and 600-degrees-C. The reverse anneal means a behavior showing the d egradation of considered parameters with increasing anneal temperature . A higher implant dosage causes a more distinct reverse anneal. The r everse anneal of electrical characteristics was associated with the re verse anneal of substitutional boron. A shallow p+-n junction with a l eakage current density lower than 3 nA/cm2, a forward ideality factor better than 1.01, and a junction depth of about 0.1-mu-m was therefore achieved by just a 550-degrees-C anneal.