INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS ALAS AND GAAS/ALGAAS HETEROSTRUCTURES/

Authors
LUGLI P BORDONE P MOLINARI E RUCKER H DEPAULA AM MACIEL AC RYAN JF SHAYEGAN M
Citation
P. Lugli et al., INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS ALAS AND GAAS/ALGAAS HETEROSTRUCTURES/, Semiconductor science and technology, 7(3B), 1992, pp. 116-119
Citations number
15
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
116 - 119
Database
ISI
SICI code
0268-1242(1992)7:3B<116:IOEWIP>2.0.ZU;2-S
Abstract
The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman me asurements of non-equilibrium phonons in GaAs/AlAs structures show str ong coupling to AlAs interface modes, in good agreement with theoretic al predictions based on a microscopic phonon model. Monte Carlo simula tions of time-resolved Raman measurements of interface phonons in GaAs /AlGaAs structures provide further confirmation of this result.