SUBPICOSECOND REAL-SPACE CHARGE-TRANSFER IN GAAS ALAS TYPE-II SUPERLATTICES/

Authors
DEPAULA AM MACIEL AC WEBER G RYAN JF DAWSON P FOXON CT
Citation
Am. Depaula et al., SUBPICOSECOND REAL-SPACE CHARGE-TRANSFER IN GAAS ALAS TYPE-II SUPERLATTICES/, Semiconductor science and technology, 7(3B), 1992, pp. 120-123
Citations number
19
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
120 - 123
Database
ISI
SICI code
0268-1242(1992)7:3B<120:SRCIGA>2.0.ZU;2-T
Abstract
We report time-resolved anti-Stokes Raman scattering measurements of s hort-period GaAs/AlAs type II superlattices which reveal directly that q approximately O confined and interface optical phonons are emitted by electrons when they transfer from the GAMMA-valley in the GaAs laye rs to the X(z) valley in the AlAs layers in structures where the GAMMA -X(z) separation is greater than the optical phonon energy. The transf er time is estimated from the risetime of the non-equilibrium phonon p opulation to be congruent-to 1 ps.