Kf. Lamprecht et al., INTRABAND INVERSION IN SEMICONDUCTORS WITH ULTRASHORT CARRIER LIFETIMES, Semiconductor science and technology, 7(3B), 1992, pp. 151-153
We studied the lifetimes and the luminescence spectra of photoexcited
carriers in H+-bombarded InP for different damage doses by means of fe
mtosecond luminescence spectroscopy. The lifetime decreases down to 95
fs for a dose of 10(16) cm-2 and the time-integrated luminescence spe
ctrum of this sample is inverted. Taking into account the different th
ermalization and relaxation conditions for electrons and holes, we fin
d that the time-averaged hole distribution is hot but thermalized, whe
reas the time-averaged electron distribution is inverted, meaning that
the electron distribution function increases with increasing energy w
ithin the conduction band.