Femtosecond pump-and-probe spectroscopy was adopted to study the hot c
arrier distribution in a CdSe thin film. In the experiment, a non-ther
malized hot carrier distribution was observed when the pump was turned
on. The non-thermalized distribution was observed at the 200 meV broa
d energy range extending from the pump energy to the low energy side.
The low energy tail of the non-thermalized distribution indicates that
the carrier-LO phonon scattering competes with the carrier-carrier sc
attering in the thermalization process. In this sense, this observatio
n is a unique example of the non-thermalized hot carrier distribution
in semiconductors. From the ratio of the non-thermalized distribution
to the total one, the thermalization time was estimated to be 16-40 fs
. In the wake of the thermalization, cooling of photogenerated carrier
s was observed. With an increase of the excitation density up to 10(19
) cm-3, the carrier cooling rate was slower. The observed cooling rate
was slower than the theoretical calculation, taking account of the sc
reening of the carrier-phonon interaction. This is ascribed to the hot
phonon effects of the LO phonon and the TO phonon.