EXCITON TRAPPING IN STRAINED GAASP QUANTUM-WELLS

Authors
TAKIGUCHI Y SHUM K ALFANO RR KOTELES ES BERTOLET DC HSU JK LAU KM
Citation
Y. Takiguchi et al., EXCITON TRAPPING IN STRAINED GAASP QUANTUM-WELLS, Semiconductor science and technology, 7(3B), 1992, pp. 170-172
Citations number
6
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
170 - 172
Database
ISI
SICI code
0268-1242(1992)7:3B<170:ETISGQ>2.0.ZU;2-C
Abstract
Exciton trapping time to interface islands in GaAsP/AlGaAs strained qu antum wells is found to be of the order of 30 ps.