DOPING DEPENDENCE OF THE ULTRAFAST THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN BULK POLAR SEMICONDUCTORS

Authors
HOHENESTER U SUPANCIC P KOCEVAR P ZHOU XQ LEMMER U CHO GC KUTT W KURZ H
Citation
U. Hohenester et al., DOPING DEPENDENCE OF THE ULTRAFAST THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN BULK POLAR SEMICONDUCTORS, Semiconductor science and technology, 7(3B), 1992, pp. 176-179
Citations number
10
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
176 - 179
Database
ISI
SICI code
0268-1242(1992)7:3B<176:DDOTUT>2.0.ZU;2-N
Abstract
Subpicosecond luminescence and transmission spectroscopy for a broad r ange of doping and optical excitation densities are used for a systema tic study of thermalization and energy relaxation of highly photoexcit ed electrons and holes in bulk intrinsic, n- and p-doped GaAs and InP at room temperature. The measurements are complemented by an ensemble- Monte-Carlo analysis, including non-equilibrium phonons and plasmons a s well as electron degeneracy.