TRANSIENT REGIME OF HOT CARRIERS IN INP

Authors
VAISSIERE JC ELKSSIMI M NOUGIER JP
Citation
Jc. Vaissiere et al., TRANSIENT REGIME OF HOT CARRIERS IN INP, Semiconductor science and technology, 7(3B), 1992, pp. 308-311
Citations number
18
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
308 - 311
Database
ISI
SICI code
0268-1242(1992)7:3B<308:TROHCI>2.0.ZU;2-W
Abstract
A direct numerical method is developed for solving the electron transi ent coupled Boltzmann equations in the GAMMA and L valleys in InP. The complicated shape of the transient distribution function is obtained with a great accuracy. Fine structures of the velocity and the energy are obtained in the GAMMA and L valleys when the population of L valle ys is very small.