HOT-ELECTRON TRANSPORT IN A PULSE-DOPED GAAS STRUCTURE

Authors
NAKAJIMA S KUWATA N NISHIYAMA N SHIGA N HAYASHI H
Citation
S. Nakajima et al., HOT-ELECTRON TRANSPORT IN A PULSE-DOPED GAAS STRUCTURE, Semiconductor science and technology, 7(3B), 1992, pp. 372-374
Citations number
8
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
372 - 374
Database
ISI
SICI code
0268-1242(1992)7:3B<372:HTIAPG>2.0.ZU;2-6
Abstract
High field electron transport properties were investigated for a pulse -doped GaAs structure which consisted of p-/n+/n- layers. Enhanced mob ility was observed due to the electron transfer from doped layer to un doped layer. Owing to this effect, the drift velocity of a pulse-doped structure is higher than that of a bulk structure.