A COMPARISON OF TRANSIENT VELOCITY OVERSHOOT IN SI AND GAAS STRUCTURES

Authors
HUGHES DT ABRAM RA KELSALL RW HOLDEN AJ
Citation
Dt. Hughes et al., A COMPARISON OF TRANSIENT VELOCITY OVERSHOOT IN SI AND GAAS STRUCTURES, Semiconductor science and technology, 7(3B), 1992, pp. 390-393
Citations number
10
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
390 - 393
Database
ISI
SICI code
0268-1242(1992)7:3B<390:ACOTVO>2.0.ZU;2-4
Abstract
We have used a self-consistent Monte Carlo simulation to investigate t he effect of high currents on the base-collector region of a heterostr ucture bipolar transistor. By considering identical device structures in Si and GaAs we are able to show that an accurate description of car rier response to field is necessary in order to obtain the correct int erdependence of velocity overshoot, field configuration and self-consi stent effects.