RESONANT MAGNETOTUNNELING OF ELECTRONS AND HOLES IN A P-I-N-DIODE DEVICE INCORPORATING A DOUBLE BARRIER STRUCTURE

We observe resonant tunnelling of electrons and holes in a GaAs p-i-n diode incorporating two AlAs barriers in the undoped region. Peaks due to the HH1, LH1, E1 and HH2 (E = electron, LH = light hole, HH = heav y hole) resonances are observed, in that order of increasing voltage. The voltage separation of the LH1 and E1 resonance is significantly la rger than expected from a simple quantum mechanical model due to an in teraction effect involving resonant buildup of electron space charge i n the quantum well. High magnetic fields B parallel-to J and B perpend icular to J are used to investigate the device and confirm the assignm ent of the resonances.