E. Scholl et al., DYNAMIC HALL-EFFECT OF HOT-ELECTRONS AS A NOVEL MECHANISM FOR CURRENTOSCILLATIONS, CHAOS AND INTERMITTENCY, Semiconductor science and technology, 7(3B), 1992, pp. 480-482
Magnetic-field-induced oscillatory instabilities in semiconductors are
explained by a novel dynamic Hall effect of hot electrons. The basic
new idea is to consider the non-linear dynamics of both the drift and
the Hall field due to dielectric relaxation coupled with impact ioniza
tion of hot carriers. This results in self-generated current or voltag
e oscillations under DC bias, period-doubling, and intermittency route
s to chaos. Numerical simulations are presented for p-Ge, n-InSb, and
n-GaAs with field-dependent mobilities and one or two shallow impurity
levels at 4.2 K. In particular, the universal scaling behaviour of ty
pe-I intermittency as a function of magnetic field is demonstrated.