A. Kittel et al., AN OSCILLATION MECHANISM OF SEMICONDUCTOR BREAKDOWN DUE TO MAGNETIC-FIELD INDUCED TRANSVERSE MOTION OF CURRENT FILAMENTS, Semiconductor science and technology, 7(3B), 1992, pp. 486-487
The self-generated formation of spontaneous current oscillations devel
oping during low-temperature impact ionization breakdown of slightly d
oped p-type germanium is explained, taking advantage of a model experi
ment. Upon applying a relatively small transverse magnetic field, the
spatially inhomogeneous current distribution, manifest in the form of
individual high conducting current filaments, undergoes a distinct tra
velling dynamics that is oriented perpendicular to the direction of th
e electric and the magnetic field (i.e. not coincident with the direct
ion of the current flow). The resulting magnetic field induced oscilla
tory behaviour can be described qualitatively by simple model consider
ations.