AN OSCILLATION MECHANISM OF SEMICONDUCTOR BREAKDOWN DUE TO MAGNETIC-FIELD INDUCED TRANSVERSE MOTION OF CURRENT FILAMENTS

Citation
A. Kittel et al., AN OSCILLATION MECHANISM OF SEMICONDUCTOR BREAKDOWN DUE TO MAGNETIC-FIELD INDUCED TRANSVERSE MOTION OF CURRENT FILAMENTS, Semiconductor science and technology, 7(3B), 1992, pp. 486-487
Citations number
7
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
486 - 487
Database
ISI
SICI code
0268-1242(1992)7:3B<486:AOMOSB>2.0.ZU;2-N
Abstract
The self-generated formation of spontaneous current oscillations devel oping during low-temperature impact ionization breakdown of slightly d oped p-type germanium is explained, taking advantage of a model experi ment. Upon applying a relatively small transverse magnetic field, the spatially inhomogeneous current distribution, manifest in the form of individual high conducting current filaments, undergoes a distinct tra velling dynamics that is oriented perpendicular to the direction of th e electric and the magnetic field (i.e. not coincident with the direct ion of the current flow). The resulting magnetic field induced oscilla tory behaviour can be described qualitatively by simple model consider ations.