HOT-ELECTRON INJECTION EL (HEI-EL) DEVICES
Citation
G. Zhou et al., HOT-ELECTRON INJECTION EL (HEI-EL) DEVICES, Semiconductor science and technology, 7(3B), 1992, pp. 549-551
SICI code
0268-1242(1992)7:3B<549:HIE(D>2.0.ZU;2-Z
Abstract
New hot-electron injection electroluminescent (HEI-EL) devices fabrica
ted on p-Si substrate were demonstrated to have a maximum luminescent
efficiency of 1.14 lm W-1. The addition of a guard-ring-like n+ layer
to control the number of electrons injected into the luminescent layer
increases the luminance over 30 times compared with HEI-EL devices wi
thout an n+ layer. The luminance was easily controlled by the low bias
voltage applied to the n+ region instead of the high voltage applied
to the substrate.
