CELLULAR AUTOMATA SIMULATION OF STATIONARY AND TRANSIENT HIGH-FIELD TRANSPORT IN SUBMICRON SI AND GAAS DEVICES

We present a detailed discussion, critical tests and applications of a new lattice gas simulation technique for high-field transport in semi conductors. This method may be viewed as a variant of the ensemble Mon te Carlo technique but can easily handle ensembles with more than 10(5 ) particles, can efficiently deal with complex geometries and achieve accelerations on multiprocessor computers that scale linearly with the number of processors. The stationary and transient transport properti es of Si and GaAs that have been calculated with this new technique co mpare very favourably with the standard Monte Carlo results.