F. Keilmann et R. Till, NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS INP-GE, Semiconductor science and technology, 7(3B), 1992, pp. 633-635
We study the response of holes in germanium to intense radiation from
far-infrared gas lasers, in the range of 28 to 174 cm-1. Two types of
nonlinear response are evaluated: (i) the saturation of inter-valence-
band absorption and (ii) the saturation of stimulated inter-valence-ba
nd emission. The effect (i) yields critical intensities I(s) between 1
0 and 1000 W cm-2, depending also on temperature between 20 and 100 K;
the saturation behaviour as well as the values of I(s) follow a model
that treats the holes as inhomogeneously broadened two-level systems.
In the presence of electric fields I(s) is found to increase drastica
lly. We interpret this as a transit-time effect of rapidly moving carr
iers. The effect (ii) measures saturation in the presence of strong E
perpendicular-to B fields in an active p-Ge laser. In this case the tr
ansit-time broadening is extreme and imposes a fully homogeneous chara
cter to the transition. Conclusions are drawn on the relaxation mechan
isms of low-energy holes as well as on the functioning of hot-hole las
ers.