NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS INP-GE

Authors
Citation
F. Keilmann et R. Till, NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS INP-GE, Semiconductor science and technology, 7(3B), 1992, pp. 633-635
Citations number
6
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
633 - 635
Database
ISI
SICI code
0268-1242(1992)7:3B<633:NFROPA>2.0.ZU;2-H
Abstract
We study the response of holes in germanium to intense radiation from far-infrared gas lasers, in the range of 28 to 174 cm-1. Two types of nonlinear response are evaluated: (i) the saturation of inter-valence- band absorption and (ii) the saturation of stimulated inter-valence-ba nd emission. The effect (i) yields critical intensities I(s) between 1 0 and 1000 W cm-2, depending also on temperature between 20 and 100 K; the saturation behaviour as well as the values of I(s) follow a model that treats the holes as inhomogeneously broadened two-level systems. In the presence of electric fields I(s) is found to increase drastica lly. We interpret this as a transit-time effect of rapidly moving carr iers. The effect (ii) measures saturation in the presence of strong E perpendicular-to B fields in an active p-Ge laser. In this case the tr ansit-time broadening is extreme and imposes a fully homogeneous chara cter to the transition. Conclusions are drawn on the relaxation mechan isms of low-energy holes as well as on the functioning of hot-hole las ers.