INVERTED DISTRIBUTIONS OF HOT HOLES IN UNIAXIALLY STRESSED GERMANIUM

Authors
GAVRILENKO VI KALUGIN NG KRASILNIK ZF NIKONOROV VV GALYAGIN AV TSERETELI PN
Citation
Vi. Gavrilenko et al., INVERTED DISTRIBUTIONS OF HOT HOLES IN UNIAXIALLY STRESSED GERMANIUM, Semiconductor science and technology, 7(3B), 1992, pp. 649-651
Citations number
9
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
7
Issue
3B
Year of publication
1992
Pages
649 - 651
Database
ISI
SICI code
0268-1242(1992)7:3B<649:IDOHHI>2.0.ZU;2-R
Abstract
Compressive stress is found to improve the characteristics of all type s of hot hole masers and lasers in p-Ge. Effects of the uniaxial stres s of p-Ge crystal on the FIR emission in both E parallel-to H and E pe rpendicular-to H fields are discussed. Mechanisms of the influence of uniaxial stress on the population inversion and the stimulated emissio n of hot holes are revealed.