THE EFFECT OF ANNEALING ON SNO2 A-SIC-H(P+-TYPE)/A-SI-H/A-SI-H(N+-TYPE)/AL STRUCTURE/

Authors
SERIN T SERIN N
Citation
T. Serin et N. Serin, THE EFFECT OF ANNEALING ON SNO2 A-SIC-H(P+-TYPE)/A-SI-H/A-SI-H(N+-TYPE)/AL STRUCTURE/, Semiconductor science and technology, 6(7), 1991, pp. 679-683
Citations number
18
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
7
Year of publication
1991
Pages
679 - 683
Database
ISI
SICI code
0268-1242(1991)6:7<679:TEOAOS>2.0.ZU;2-X