DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWNBY METAL ORGANIC MOLECULAR-BEAM EPITAXY

Authors
PEARTON SJ ABERNATHY CR REN F FULLOWAN TR
Citation
Sj. Pearton et al., DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWNBY METAL ORGANIC MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 6(11), 1991, pp. 1042-1047
Citations number
17
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
11
Year of publication
1991
Pages
1042 - 1047
Database
ISI
SICI code
0268-1242(1991)6:11<1042:DEAIIC>2.0.ZU;2-2