PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE

Authors
DEMICHELIS F PIRRI CF TRESSO E DELLAMEA G RIGATO V RAVA P
Citation
F. Demichelis et al., PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE, Semiconductor science and technology, 6(12), 1991, pp. 1141-1146
Citations number
25
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
12
Year of publication
1991
Pages
1141 - 1146
Database
ISI
SICI code
0268-1242(1991)6:12<1141:POUADH>2.0.ZU;2-P