GERMANIUM CONCENTRATION PROFILING OF SI GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION/

Authors
BASARAN E KUBIAK RA PARRY CP NEWSTEAD SM PARKER EHC WHALL TE
Citation
E. Basaran et al., GERMANIUM CONCENTRATION PROFILING OF SI GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION/, Semiconductor science and technology, 6(12), 1991, pp. 1175-1177
Citations number
8
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
12
Year of publication
1991
Pages
1175 - 1177
Database
ISI
SICI code
0268-1242(1991)6:12<1175:GCPOSG>2.0.ZU;2-8