ELECTRICAL CHARACTERIZATION OF INSITU AL-GASB SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY

Authors
POOLE I LEE ME SINGER KE
Citation
I. Poole et al., ELECTRICAL CHARACTERIZATION OF INSITU AL-GASB SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 6(9), 1991, pp. 881-885
Citations number
18
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
9
Year of publication
1991
Pages
881 - 885
Database
ISI
SICI code
0268-1242(1991)6:9<881:ECOIAS>2.0.ZU;2-8