TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR

Authors
SIMOEN E DIERICKX B CLAEYS C DECLERCK G
Citation
E. Simoen et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR, Semiconductor science and technology, 6(9), 1991, pp. 905-911
Citations number
29
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
9
Year of publication
1991
Pages
905 - 911
Database
ISI
SICI code
0268-1242(1991)6:9<905:TOSDA4>2.0.ZU;2-M