INFLUENCE OF THE BOUNDARY BETWEEN MONOCRYSTALLINE AND POLYCRYSTALLINESILICON ON THE ELECTRICAL CHARACTERISTICS OF DIODES GROWN BY DIFFERENTIAL MBE

Authors
KUISL M KONIG U SCHAFFLER F
Citation
M. Kuisl et al., INFLUENCE OF THE BOUNDARY BETWEEN MONOCRYSTALLINE AND POLYCRYSTALLINESILICON ON THE ELECTRICAL CHARACTERISTICS OF DIODES GROWN BY DIFFERENTIAL MBE, Semiconductor science and technology, 6(5), 1991, pp. 365-369
Citations number
23
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
5
Year of publication
1991
Pages
365 - 369
Database
ISI
SICI code
0268-1242(1991)6:5<365:IOTBBM>2.0.ZU;2-C