DEEP LEVEL TRANSIENT SPECTROSCOPY OF DX CENTERS IN AL0.38GA0.62AS - TE UNDER UNIAXIAL-STRESS

Authors
LI MF YU PY BAUSER E HANSEN WL HALLER EE
Citation
Mf. Li et al., DEEP LEVEL TRANSIENT SPECTROSCOPY OF DX CENTERS IN AL0.38GA0.62AS - TE UNDER UNIAXIAL-STRESS, Semiconductor science and technology, 6(8), 1991, pp. 825-829
Citations number
22
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
8
Year of publication
1991
Pages
825 - 829
Database
ISI
SICI code
0268-1242(1991)6:8<825:DLTSOD>2.0.ZU;2-U