HIGH-RESOLUTION DRY ETCHING OF ZINC TELLURIDE - CHARACTERIZATION OF ETCHED SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY, PHOTOLUMINESCENCE AND RAMAN-SCATTERING

Authors
FOAD MA WATT M SMART AP TORRES CMS WILKINSON CDW KUHN W WAGNER HP BAUER S LEIDERER H GEBHARDT W
Citation
Ma. Foad et al., HIGH-RESOLUTION DRY ETCHING OF ZINC TELLURIDE - CHARACTERIZATION OF ETCHED SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY, PHOTOLUMINESCENCE AND RAMAN-SCATTERING, Semiconductor science and technology, 6(9A), 1991, pp. 115-122
Citations number
24
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
9A
Year of publication
1991
Pages
115 - 122
Database
ISI
SICI code
0268-1242(1991)6:9A<115:HDEOZT>2.0.ZU;2-A