HALL MEASUREMENTS UNDER WEAK PERSISTENT PHOTOEXCITATION IN SI-DOPED ALXGA1-XAS

Authors
BARALDI A GHEZZI C PARISINI A BOSACCHI A FRANCHI S
Citation
A. Baraldi et al., HALL MEASUREMENTS UNDER WEAK PERSISTENT PHOTOEXCITATION IN SI-DOPED ALXGA1-XAS, Semiconductor science and technology, 6(10B), 1991, pp. 27-30
Citations number
15
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
10B
Year of publication
1991
Pages
27 - 30
Database
ISI
SICI code
0268-1242(1991)6:10B<27:HMUWPP>2.0.ZU;2-Y