IONIZATION AND CAPTURE KINETICS OF DX CENTERS IN ALGAAS AND GASB - APPROACH FOR A NEGATIVE-U DEFECT

Authors
DOBACZEWSKI L KACZOR P
Citation
L. Dobaczewski et P. Kaczor, IONIZATION AND CAPTURE KINETICS OF DX CENTERS IN ALGAAS AND GASB - APPROACH FOR A NEGATIVE-U DEFECT, Semiconductor science and technology, 6(10B), 1991, pp. 51-57
Citations number
28
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
10B
Year of publication
1991
Pages
51 - 57
Database
ISI
SICI code
0268-1242(1991)6:10B<51:IACKOD>2.0.ZU;2-9