THE UTILIZATION OF DX CENTERS IN HIGH-PRESSURE STUDIES OF LOW-DIMENSIONAL DOPING STRUCTURES IN GAAS

Authors
STRADLING RA JOHNSON EA MACKINNON A KUMAR R SKURAS E HARRIS JJ
Citation
Ra. Stradling et al., THE UTILIZATION OF DX CENTERS IN HIGH-PRESSURE STUDIES OF LOW-DIMENSIONAL DOPING STRUCTURES IN GAAS, Semiconductor science and technology, 6(10B), 1991, pp. 137-142
Citations number
24
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
10B
Year of publication
1991
Pages
137 - 142
Database
ISI
SICI code
0268-1242(1991)6:10B<137:TUODCI>2.0.ZU;2-W