THE EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DX CENTERS IN GAAS AND GAASP

Authors
SMID V KRISTOFIK J ZEMAN J MARES JJ
Citation
V. Smid et al., THE EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DX CENTERS IN GAAS AND GAASP, Semiconductor science and technology, 6(10B), 1991, pp. 150-153
Citations number
27
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
6
Issue
10B
Year of publication
1991
Pages
150 - 153
Database
ISI
SICI code
0268-1242(1991)6:10B<150:TEOHHO>2.0.ZU;2-9