D. Ashkenasi et al., PULSE-WIDTH INFLUENCE ON LASER STRUCTURING OF DIELECTRICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 359-363
The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiat
ed by laser light at a wavelength of 790 nm for different pulse widths
(between 200 fs and 5 ps) and fluences near the single shot damage th
reshold has been investigated by using the complementary techniques of
electron microscopy and atomic force microscopy, Differences can be o
bserved which we relate to the mechanisms and dynamics of defect produ
ction in these wide band gap materials.