STUDIES ON NITRIDATION OF LASER EVAPORATED III-IV GROUP ELEMENTS WITHGASEOUS AMMONIA AND THIN-FILM DEPOSITION

Groups In and IV nitrides have been viewed as promising materials in m any technological applications, mostly in electronic devices and in ce ramic materials. Many techniques such as CVD and MBE have been used to grow nitride thin films. A method to prepare nitrides by adding gaseo us ammonia to laser evaporated elements has been developed in our labo ratory. B, In, Si and Ge nitrides have been prepared by this method. T he intermediate steps in nitride production have been examined by opti cal emission measurements and by mass spectrometry of the gas phase. T he final products of the reaction have been characterized on various s ubstrate surfaces by conventional techniques such as SEM, XRD and IR.