MODULATION OF A SEMICONDUCTOR-TO-SEMIMETAL TRANSITION AT 7-THZ VIA COHERENT LATTICE-VIBRATIONS

Citation
Tk. Cheng et al., MODULATION OF A SEMICONDUCTOR-TO-SEMIMETAL TRANSITION AT 7-THZ VIA COHERENT LATTICE-VIBRATIONS, Applied physics letters, 62(16), 1993, pp. 1901-1903
Citations number
20
Journal title
ISSN journal
00036951
Volume
62
Issue
16
Year of publication
1993
Pages
1901 - 1903
Database
ISI
SICI code
0003-6951(1993)62:16<1901:MOASTA>2.0.ZU;2-#
Abstract
This letter introduces the general notion of significantly modulating the physical characteristics of a solid on a terahertz time scale with coherent lattice vibrations. We show, as an example, experiments in w hich coherent phonons are optically excited in single-crystal Ti2O3, w hich is a narrow-gap semiconductor at 300 K and gradually transforms i nto a semimetal at 600 K. Quantitative comparison of previous equilibr ium measurements to our new transient measurements suggests that the i nduced coherent lattice vibration is significantly modulating the semi conductor-to-semimetal transition at 7 THz.