NEAR-EQUILIBRIUM GROWTH OF THICK, HIGH-QUALITY BETA-SIC BY SUBLIMATION

A close spaced near-equilibrium growth technique was used to produce t hick, high quality epitaxial layers of beta-silicon carbide. The proce ss utilized a sublimation method to grow morphologically smooth layers . The beta silicon carbide growth layers varied from about 200 to 750 mum in thickness. Chemical vapor deposition grown, 2-10 mum, beta sili con carbide films were used as seeds at 1860 and 1910-degrees-C growth temperatures. The respective average growth rates were 20 and 30 mum per hour. The layers are p-type with a 3.1 X 10(17) cm-3 carrier conce ntration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdo wn values ranged from 25 to 60 V. These measurements represent the hig hest values reported for 3C-SiC.